SiC Wafer 4H N-type Silicon Carbide grade 2inch 4inch 6inch 8inch DSP Customized

SiC Wafer 4H N-type Silicon Carbide grade 2inch 4inch 6inch 8inch DSP Customized

Description of SiC Wafer:

The Silicon Carbide Wafer comes in a 4H n-type, which is the most commonly used type for silicon carbide wafers. This type of wafer is preferred for its high carrier mobility, high thermal conductivity, and high chemical and mechanical stability.

The Silicon Carbide Wafer is available in three different grades: Production, Research, and Dummy. The Production grade wafer is designed for use in commercial applications and is produced to strict quality standards. The Research grade wafer is designed for use in research and development applications and is produced to even higher quality standards. The dummy-grade wafer is designed for use as a placeholder in the manufacturing process.

The character of SiC Wafer:

Silicon carbide (SiC) wafers are a key semiconductor material that plays an important role in high-power, high-frequency electronic devices, among other applications. Here are some of the characteristics of SiC wafers:

1.Wideband gap characteristics:
SiC has a wide bandgap, typically between 2.3 and 3.3 electron volts, which makes it excellent for high-temperature and high-power applications. This wide-band gap property helps reduce the leakage current in the material and improve the performance of the device.

2.Thermal conductivity:
SiC has very high thermal conductivity, several times higher than conventional silicon wafers. This high thermal conductivity facilitates efficient heat dissipation in high-power electronic devices and improves device stability and reliability.

3.Mechanical properties:
SiC has excellent mechanical strength and hardness, which is important for applications in high temperature and harsh environments. SiC wafers perform well in high temperature, high pressure, and high radiation environments, making them suitable for applications requiring high strength and durability.

4.Chemical stability:
SiC has a high resistance to chemical corrosion and can resist the attack of many chemicals, so it performs well in some special environments where stable performance is required.

5.Electrical properties:
SiC has a high breakdown voltage and low leakage current, making it very useful in high voltage, high frequency electronic devices. In addition, SiC wafers have lower resistivity and higher permittivity, which is essential for RF applications.

In general, SiC wafers have broad application prospects in high-power electronic devices, RF devices, and optoelectronic devices due to their excellent electrical, thermal, and mechanical properties.

Table of characteristics of SiC Wafer:

Physical photo of SiC Wafer:

Applications of SiC Wafer:

1. Power electronic devices:
SiC wafers have a wide range of applications in the field of power electronic devices such as power MOSFETs (metal oxide semiconductor field effect transistors) and SCHTKEY (Schottky barrier diodes). The high breakdown field strength and high electron saturation drift velocity of SiC material make it an ideal choice for high power density and high efficiency power converters.

2. Radio frequency (RF) devices:
SiC wafers also find important applications in RF devices, such as RF power amplifiers and microwave devices. The high electron mobility and low loss of SiC materials make them excellent in high frequency and high power applications.

3. Optoelectronic devices:
SiC wafers are also finding increasing applications in optoelectronic devices, such as photodiodes, ultraviolet light detectors, and laser diodes. The excellent optical properties and stability of SiC material make it an important material in the field of optoelectronic devices.

4. High temperature sensor:
SiC wafers are widely used in the field of high temperature sensors due to their excellent mechanical properties and high temperature stability. SiC sensors can operate stably in high temperature, radiation, and corrosive environments and are suitable for the aerospace, energy, and industrial sectors.

5. Radiation resistant electronic devices:
The radiation resistance of SiC wafers makes them widely used in nuclear power, aerospace and other fields where radiation resistance characteristics are required. SiC material has high stability to radiation and is suitable for electronic devices in high radiation environment.

Image of application of SiC Wafer:

Customization of SiC Wafer:

We are committed to providing high quality and high performance customized SiC wafer solutions to meet the diverse needs of our customers. With advanced production equipment and technical team, our factory can customize SiC wafers of various specifications, thicknesses and shapes according to the specific requirements of our customers.

FAQ:

1. Q: What is the largest sapphire wafer?
A:300mm (12 inch) sapphire is now largest wafer for Light Emitting Diodes (LEDs) and consumer electronics.

2. Q: What size are sapphire wafers?

A: Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants.

3. Q:What is the difference between sapphire and silicon wafers?
A: LEDs are the most popular applications for sapphire. The material is transparent and is an excellent conductor of light. In comparison, silicon is opaque and does not allow for efficient light extraction. The semiconductor material is ideal for LEDs, however, because it is both cheap and transparent.

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