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SiC Substrate 4inch P-type 4H/6H-P N-type 3C-N Zero Grade Production Grade Dummy Grade

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SiC Substrate 4inch P-type 4H/6H-P N-type 3C-N Zero Grade Production Grade Dummy Grade

Name: SiC Substrate 4inch Ptype 4H6HP Ntype 3CN Zero Grade Production Grade Dummy Grade
Brand: ZMSH
Price: 1 USD

Wholesale SiC Substrate 4inch P-type 4H/6H-P N-type 3C-N Zero Grade Production Grade Dummy Grade from china suppliers

Brand Name : ZMSH

Place of Origin : China

Payment Terms : T/T

Delivery Time : 2-4weeks

Diameter : 99.5 mm~100.0 mm

Thickness : 350 ym ± 25 ym

Wafer Orientation : Off axis: 2.0*-4.0°toward [1120]+0.5° for 4H/6H,P,On axis:(111)+ 0.5° for 3C-N

Micropipe Density : 0 cm2

Resistivity p-type 4H/6H-P : ≤0.1

Resistivity n-type 3C-N : ≤0.8

Primary Flat Length Secondary Flat Length : 32.5 mm + 2.0 mm

Secondary Flat Orientation : Silicon face up: 90° CW. from Prime flat ± 5.0°

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SiC Substrate 4inch P-type 4H/6H-P N-type 3C-N Zero Grade Production Grade Dummy Grade

P-type SiC Substrate's abstract

P-type Silicon Carbide (SiC) substrates are essential in the development of advanced electronic devices, particularly for applications requiring high power, high frequency, and high temperature performance. This study investigates the structural and electrical properties of P-type SiC substrates, emphasizing their role in enhancing device efficiency in harsh environments. Through rigorous characterization techniques, including Hall effect measurements, Raman spectroscopy, and X-ray diffraction (XRD), we demonstrate the superior thermal stability, carrier mobility, and electrical conductivity of P-type SiC substrates. The findings reveal that P-type SiC substrates exhibit lower defect densities and improved doping uniformity compared to N-type counterparts, making them ideal for next-generation power semiconductor devices. The study concludes with insights into optimizing P-type SiC growth processes, ultimately paving the way for more reliable and efficient high-power devices in industrial and automotive applications.

P-type SiC Substrate's properties

Property	4H-SiC (P-type)	6H-SiC (P-type)	3C-SiC (N-type)	Zero Grade	Production Grade	Dummy Grade
Crystal Structure	Hexagonal	Hexagonal	Cubic	Highest purity and minimal defect density	High quality for production environments	Used for equipment setup and testing
Conductivity Type	P-type	P-type	N-type	Near-zero micropipe density	Controlled defect density and doping	Lower purity, may contain defects
Doping Type	Typically Al or B doped	Typically Al or B doped	Typically N doped	Extreme precision for critical applications	Optimized for consistent performance	Not optimized for electrical properties
Substrate Size	4-inch diameter	4-inch diameter	4-inch diameter	Size consistency with low tolerances	Standard sizes with industry tolerances	Typically same size as production-grade
Micropipe Density	<1 cm²	<1 cm²	<1 cm²	Ultra-low micropipe density	Low micropipe density	Higher micropipe density
Thermal Conductivity	High (~490 W/m·K)	Moderate (~490 W/m·K)	Lower (~390 W/m·K)	High thermal conductivity	Maintains high conductivity	Thermal properties similar to production
Surface Roughness	Atomically smooth	Atomically smooth	Slightly rougher	Atomically smooth	Polished for device fabrication	Not polished, intended for testing
Carrier Mobility	High	Moderate	Lower than 4H/6H	Highest mobility for precision devices	Sufficient for production-grade devices	Not characterized for mobility
Typical Applications	Power electronics, RF devices	Power electronics, LEDs	Power electronics, research	High-end research, advanced semiconductor devices	Mass production of devices	Equipment calibration, process development

1. Electrical Properties:

Doping Type: P-type (typically doped with elements like aluminum (Al) or boron (B))
Bandgap: 3.23 eV (for 4H-SiC) or 3.02 eV (for 6H-SiC), wider than that of silicon (1.12 eV), which allows for better performance in high-temperature applications.
Carrier Concentration: Typically in the range of $1 0^{15}$ $1 0^{15}$ to $1 0^{19}$ $1 0^{19}$ cm $^{- 3}$ $^{- 3}$ , depending on the doping level.
Hole Mobility: Ranges from 20 to 100 cm²/V·s, which is lower than electron mobility due to the heavier effective mass of holes.
Resistivity: Ranges from low (depending on doping concentration) to moderately high, depending on the doping level. Higher doping levels reduce resistivity.

2. Thermal Properties:

Thermal Conductivity: SiC has high thermal conductivity, around 3.7-4.9 W/cm·K (depending on the polytype and temperature), which is much higher than silicon (~1.5 W/cm·K). This allows for effective heat dissipation in high-power devices.
High Melting Point: Approximately 2700°C, making it suitable for high-temperature applications.

3. Mechanical Properties:

Hardness: SiC is one of the hardest materials, with a Mohs hardness of about 9. This makes it highly resistant to physical wear.
Young's Modulus: Around 410-450 GPa, indicating strong mechanical stiffness.
Fracture Toughness: Although SiC is hard, it is somewhat brittle, with a fracture toughness of about 3 MPa·m $^{1 / 2}$ $^{1/2}$ .

4. Chemical Properties:

Chemical Stability: SiC is chemically inert and highly resistant to most acids, alkalis, and oxidation. This makes it suitable for use in harsh environments.
Oxidation Resistance: SiC forms a protective silicon dioxide (SiO₂) layer when exposed to oxygen at high temperatures, which enhances its oxidation resistance.

5. Optical Properties:

Transparency: SiC substrates are not optically transparent in visible light but can be transparent in the infrared spectrum, depending on the doping concentration and thickness.

6. Radiation Hardness:

SiC exhibits excellent resistance to radiation damage, which is beneficial for space and nuclear applications.

7. Common Polytypes:

The most common polytypes of SiC used in electronic devices are 4H-SiC and 6H-SiC. These polytypes differ in their stacking sequence, which affects the material's electronic properties, such as carrier mobility and bandgap.

P-type SiC Substrate's data sheet

SiC Substrate 4inch P-type 4H/6H-P N-type 3C-N Zero Grade Production Grade Dummy Grade

P-type SiC Substrate's application

1. Power Electronics:

High-Voltage Devices: P-type SiC substrates are used in power MOSFETs, Schottky diodes, and thyristors for applications requiring high voltage, high power, and high efficiency. These devices are crucial for power conversion systems, including those in electric vehicles, renewable energy systems (e.g., solar inverters), and industrial motor drives.
Increased Efficiency and Reliability: The wide bandgap of SiC allows devices to operate at higher temperatures, voltages, and frequencies than traditional silicon-based devices, leading to enhanced efficiency and reduced size of power electronics.

2. RF and Microwave Devices:

High-Frequency Applications: P-type SiC substrates are used in RF (Radio Frequency) amplifiers, mixers, and oscillators, particularly in communication systems, radar systems, and satellite communications. The high thermal conductivity of SiC ensures that these devices maintain performance even under high-power operation.
5G Technology: The ability to operate at higher frequencies and higher power densities makes SiC substrates ideal for devices in the 5G communication infrastructure.

3. LEDs and Optoelectronic Devices:

LED Substrates: P-type SiC is used as a substrate material for producing LEDs, particularly for blue and green light emission. Its thermal stability and lattice match with nitride-based semiconductors (such as GaN) make it suitable for high-brightness LEDs used in automotive lighting, displays, and general illumination.
Photodetectors and Solar Cells: SiC substrates are employed in UV photodetectors and high-efficiency solar cells due to their ability to withstand extreme environments, such as high temperatures and radiation exposure.

4. High-Temperature Electronics:

Aerospace and Defense: SiC-based devices are ideal for aerospace and defense applications, including jet engine control systems, where components must function reliably at high temperatures and under extreme mechanical stress.
Oil and Gas Exploration: SiC devices are used in downhole drilling and monitoring systems, where high-temperature electronics are necessary to withstand the harsh environments of oil and gas wells.

5. Automotive Applications:

Electric Vehicles (EVs): P-type SiC substrates enable the production of efficient power electronics used in electric vehicle inverters, chargers, and onboard power systems, contributing to improved range and charging speed in EVs.
Hybrid and Electric Powertrains: The higher efficiency and thermal performance of SiC power devices make them well-suited for automotive powertrain applications, where reducing weight and improving energy efficiency is crucial.

6. Industrial and Renewable Energy:

Solar Inverters: SiC substrates allow for the development of more compact and efficient inverters in photovoltaic systems, which convert DC power generated by solar panels into AC power.
Wind Energy Systems: In wind turbines, SiC devices are used to enhance the efficiency of power conversion systems, reducing energy losses and improving overall system reliability.

7. Medical Devices:

Medical Imaging and Diagnostic Equipment: SiC-based devices are used in high-frequency and high-power electronics for imaging systems such as CT scanners and X-ray machines, where reliability and thermal management are crucial.

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