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Brand Name : ZMSH
Certification : Rohs
Place of Origin : China
MOQ : 11
Payment Terms : T/T
Delivery Time : 2-4weeks
Packaging Details : Single Wafer Container
Diameter : 300mm 12inch
Thickness : 750μm±15 μm
Wafer Orientation : Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI
Micropipe Density : ≤0.4cm-2
Resistivity : ≥1E10 Ω·cm
Roughness : Ra≤0.2 nm
Base plane dislocation : ≤1000 cm-2
Packaging : Single Wafer Container
SiC wafer 12inch 300mm thickness 750±25um Prime Dummy Reaserch Grade for Semiconductor
12 inch SiC wafer‘s abstract
A 12-inch (300mm) Silicon Carbide (SiC) wafer, with a thickness of 750±25 microns, is a critical material in the semiconductor industry due to its exceptional thermal conductivity, high breakdown voltage, and superior mechanical properties. These wafers are manufactured with advanced techniques to meet the stringent requirements of high-performance semiconductor applications. SiC's inherent properties make it ideal for power devices and high-temperature electronics, offering higher efficiency and durability compared to traditional silicon-based semiconductors.
12 inch SiC wafer‘s data sheet
1 2 inch Silicon Carbide (SiC) Substrate Specification | |||||
Grade | ZeroMPD Production Grade(Z Grade) | Standard Production Grade(P Grade) | Dummy Grade (D Grade) | ||
Diameter | 3 0 0 mm~1305mm | ||||
Thickness | 4H-N | 750μm±15 μm | 750μm±25 μm | ||
4H-SI | 750μm±15 μm | 750μm±25 μm | |||
Wafer Orientation | Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI | ||||
Micropipe Density | 4H-N | ≤0.4cm-2 | ≤4cm-2 | ≤25cm-2 | |
4H-SI | ≤5cm-2 | ≤10cm-2 | ≤25cm-2 | ||
Resistivity | 4H-N | 0.015~0.024 Ω·cm | 0.015~0.028 Ω·cm | ||
4H-SI | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |||
Primary Flat Orientation | {10-10} ±5.0° | ||||
Primary Flat Length | 4H-N | N/A | |||
4H-SI | Notch | ||||
Edge Exclusion | 3 mm | ||||
LTV/TTV/Bow /Warp | ≤5μm/≤15μm/≤35 μm/≤55 μm | ≤5μm/≤15μm/≤35 □ μm/≤55 □ μm | |||
1 Roughness | Polish Ra≤1 nm | ||||
CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
Edge Cracks By High Intensity Light 1 Hex Plates By High Intensity Light 1 Polytype Areas By High Intensity Light Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Light | None Cumulative area ≤0.05% None Cumulative area ≤0.05% None | Cumulative length ≤ 20 mm, single length≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Cumulative area ≤3% Cumulative length≤1×wafer diameter | |||
Edge Chips By High Intensity Light | None permitted ≥0.2mm width and depth | 7 allowed, ≤1 mm each | |||
Threading screw dislocation | ≤500 cm-2 | N/A | |||
Base plane dislocation | ≤1000 cm-2 | N/A | |||
Silicon Surface Contamination By High Intensity Light | None | ||||
Packaging | Multi-wafer Cassette Or Single Wafer Container |
12 inch SiC wafer‘s photo
12 inch SiC wafer‘s properties
Q&A
Q: What are the advantages of using 12-inch SiC wafers in semiconductor manufacturing?
A:The main advantages of using 12-inch SiC wafers include:
Q: What are the key applications for 12-inch SiC wafers in high-power systems?
A:12-inch SiC wafers are particularly suitable for high-power applications such as:
Tag: 12-inch SiC Wafer SiC Wafer 300mm SiC wafer
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SiC Wafer 12inch 300mm Thickness 1000±50um 750±25um Prime Dummy Reaserch Grade For Semiconductor Images |