4inch 4H-Semi HPSI SiC Wafer for Semiconductor and Electronics
What Are SiC Wafers and What Are They Used For?
Silicon Carbide (SiC) wafers are semiconductor substrates made from a compound of silicon and carbon. SiC is a wide bandgap semiconductor, unlike wafer manufacturing with simple silicon, which means it can operate under extreme conditions, including high temperatures, high voltages, and high frequencies. This makes SiC wafers ideal for demanding electronic applications.
Introduction of 4H Semi-Insulating SiC Wafer:
4H Semi-Insulating Silicon Carbide (SiC) wafers are high-purity, high-resistivity single-crystal substrates made from the 4H polytype of silicon carbide. They are designed primarily for radio frequency (RF), microwave, 5G communication, and power electronics isolation applications, where excellent electrical insulation, low loss, and high thermal conductivity are essential. 4H Semi-Insulating SiC wafers combine wide bandgap energy, high thermal conductivity, and high resistivity, making them ideal substrates for RF, microwave, and high-frequency communication devices. Their excellent isolation performance and thermal stability enable the production of next-generation high-power and high-frequency systems, supporting industries such as 5G, aerospace, and advanced electronics.
Specification of ZMSH 4inch 4H-Semi Sic Substrates:
| Specification of 4 inch diameter 4H-Semi Silicon Carbide (SiC) Substrate |
| Grade |
Zero MPD
Production |
Standard Production
Grade(P Grade) |
Dummy Grade
(D Grade) |
| Diameter | 99.5 mm~ 100.0 mm |
| Thickness | 4H-Semi | 500 μm±15 μm | 500 μm±25 μm |
| Wafer Orientation | Off axis : 4.0° toward <1120 > ±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI |
| Micropipe Density | 4H-Semi | ≤ 1cm-2 | ≤ 5 cm-2 | ≤15 cm-2 |
| Resistivity | 4H-Semi | ≥1E10 Ω·cm | ≥1E5 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each |
Silicon Surface Contamination By High Intensity | None |
| Threading Screw Dislocation | ≤500 cm-2 | N/A |
| Package | Multi-wafer Cassette Or Single Wafer Container |
Key Advantages of Sic Wafers and Substrates:
Wider Bandgap:
A larger bandgap ensures that electrons are less likely to be thermally excited at high temperatures, resulting in weaker intrinsic excitation and better high-temperature tolerance. The bandgap of silicon carbide (SiC) is about three times wider than that of silicon, allowing a theoretical operating temperature above 400 °C.
High Critical Breakdown Field:
The critical electric field refers to the field strength at which a material undergoes electrical breakdown. Beyond this point, it loses its insulating properties — a key factor in determining voltage resistance. SiC’s critical breakdown field is about ten times higher than that of silicon, enabling it to withstand higher voltages and making it ideal for high-voltage devices.
Excellent Thermal Conductivity:
High temperature is one of the main factors affecting device lifespan. Thermal conductivity represents a material’s ability to transfer heat. SiC’s high thermal conductivity allows efficient heat dissipation, reducing device temperature and maintaining stable operation.
High Saturated Electron Drift Velocity:
The saturated electron drift velocity refers to the maximum directional speed of electrons in a semiconductor. This value determines the switching frequency of a device. SiC’s drift velocity is about twice that of silicon, which helps achieve higher operating frequencies and enables device miniaturization.
Application of 4H Semi-insulating SiC Crystal Substrate and Wafer:
Slicon carbide (SiC) crytsals have unique physical and electronic properties. Sic-based devices have been used for short-wavelenath photoelectricilyhioh-temperalure, anli-radiaion applications,. High power and hiah freqency electronic devices made ftom semiinsulating siicon carbide substrates aresuperior to those based on Si and GaAs, and 4H semiinsulaing Sic wafers are mainly used in Power device and RF device. Moreover, it can be usedas caiers for temporary bonding. For transparent semiinsulated Sic substrate, it has a transparent rate around 70% and is suitable for heat dissiationoptics.
ZMSH Related SiC Wafer Recommendation:
High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
Q&A:
Q: What is a SiC wafer?
A: A SiC wafer — short for Silicon Carbide wafer — is a single-crystal substrate made from silicon (Si) and carbon (C) atoms. It is one of the most important wide-bandgap semiconductor materials used in next-generation power electronics, RF devices, and high-temperature applications. A SiC wafer is a high-performance semiconductor substrate known for its wide bandgap, superior heat conductivity, and high voltage endurance. It enables smaller, faster, and more energy-efficient electronic devices — powering the future of electric vehicles, renewable energy systems, and advanced communication technologies.
Q:What is the difference between SI wafer and SiC wafer?
A: Silicon wafers are ideal for general-purpose electronics — affordable and reliable for low-to-medium power devices. SiC wafers, as wide-bandgap semiconductors, excel in high-power, high-voltage, and high-temperature environments, enabling faster, smaller, and more efficient power electronics.
Q: Which is better, SiC or GaN?
A: SiC (Silicon Carbide) is best for high-power, high-voltage, high-temperature applications such as electric vehicles, rail transit, and renewable energy.GaN (Gallium Nitride) excels in high-frequency, low-to-medium voltage applications like fast chargers, RF amplifiers, and 5G systems.
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