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SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity

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SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity

Brand Name : ZMSH

Model Number : InP

Place of Origin : China

MOQ : 1

Payment Terms : T/T

Delivery Time : 2-4 weeks

EPD : 5500cm2

Polished : DSP SSP

Mobility : 1200~2000

Conductivity Type : N-type Or P-type

Etch Pit Density : ≤1E2/cm2

Packaging : Packaging Method Of The Wafer Vacuum Packaging, Nitrogen Backfilled

Doping Concentration : Concentration Of The Doping Element 1×10^16 - 1×10^18 Cm^-3

Doping Element : Element Used For Doping Antimony (Sb), Indium (In), Phosphorus (P), Etc.

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Product Description:

Our InP (Indium Phosphide) wafers are renowned for their low defect density and high performance, widely used in optoelectronics and microelectronics. These wafers are crafted using precision growth techniques, ensuring the material's high purity and excellent crystal structure, significantly reducing defect density, and enhancing device performance and reliability.InP available in diameters from 2 to 6 inches, our wafers meet the needs of various applications. We also offer a range of surface treatment options, including polishing, etching, and oxidation, to accommodate specific process requirements. To ensure product consistency and reliability, we implement stringent quality control procedures and provide detailed product inspection reports. Opting for our low-defect InP wafers ensures exceptional performance and stable quality, helping your products stand out in the highly competitive market.

Features:

  • High Thermal Conductivity: InP exhibits relatively high thermal conductivity, aiding in effective heat dissipation in electronic devices.
  • Chemical Stability: InP is chemically stable and highly resistant to many chemical substances in the environment.
  • Compatibility: InP can form heterostructures with other III-V group materials such as GaAs and InGaAs, which is crucial in manufacturing high-performance optoelectronic and microelectronic devices.
  • Mechanical Strength: Although more brittle than silicon, InP still has sufficient mechanical strength to withstand the pressures of manufacturing and packaging processes.
  • Radiation Resistance: InP has strong resistance to radiation, making it suitable for use in harsh environments, such as space applications.
  • High Bandgap Engineering Adaptability: The material properties of InP can be manipulated for specific applications through bandgap engineering.
  • High Bandgap Engineering Adaptability: The material properties of InP can be manipulated for specific applications through bandgap engineering.
SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity

Technical Parameters:

Parameters Details
EPD 5500cm2
Growth Method VGF
Flatness Flatness Of The Wafer Surface ≤0.5 μm
Packaging Vacuum Packaging, Nitrogen Backfilled
Etch Pit Density ≤1E2/cm2
Polished DSP SSP
Doping Element Antimony (Sb), Indium (In), Phosphorus (P), Etc.
Defect Density ≤500 Cm^-2
Diameter 2-6 Inches
Storage Conditions Temperature 20-25°C, Humidity ≤60%
Keywords Optoelectronic Integrated Circuits, High Electron Mobility, Solar Cells

Applications:

  • Optical Sensing: InP’s optical properties make it an ideal material for creating sensors that can detect a variety of environmental parameters, such as temperature, pressure, and chemical composition.
  • Fiber Lasers: InP is used in the production of fiber lasers, which are known for their high efficiency and ability to produce a high-quality beam. These lasers are used in material processing, medical applications, and telecommunications.
  • Night Vision Technology: The infrared transparency of InP makes it a suitable material for applications in night vision technology, where it is used to enhance visibility in low-light conditions.
  • Satellite Communication: InP’s radiation resistance and high-frequency performance make it an excellent choice for satellite communication applications, where it is used in the fabrication of transistors and other electronic components.
  • Optical Disc Storage: InP can be used in the manufacture of optical disc storage devices due to its ability to efficiently emit and detect light.
SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity

Customization:

Gallium Nitride Wafer Customization Service

ZMSH provides customization services for Gallium Nitride Wafer with high electron mobility and semiconductor properties. Our Gallium Nitride Wafer includes Model Number InP and is manufactured with quality components from China. Its storage conditions require a temperature of 20-25°C and humidity of ≤60%. The etch pit density is ≤1E2/cm2 and the flatness of the wafer surface is ≤0.5 μm. We offer two types of polishing: DSP and SSP. The doping element used for doping includes antimony (Sb), indium (In), phosphorus (P), etc.

Support and Services:

We provide technical support for Gallium Nitride Wafers. Our experienced personnel can assist you in the selection, application, and implementation of the right wafer for your needs. We provide a range of services including:

  • Advice on wafer selection and design
  • Technical support and troubleshooting
  • Process optimization and design
  • Process validation and qualification
  • Process monitoring and control
  • Process improvement and troubleshooting
  • Product and process engineering
  • Product development and testing

We can also provide comprehensive training on the use of Gallium Nitride Wafers, as well as ongoing technical support. Our team is available 24/7 to answer any questions you may have.

Packing and Shipping:

Packaging and Shipping of Gallium Nitride Wafer

Gallium Nitride Wafer is packaged and shipped in accordance with the highest industry standards. The wafer is placed in an appropriate container, such as a padded box, that is then sealed with a protective seal. The container is then placed inside a larger container such as a cardboard box or a plastic bag. The larger container is then sealed and labeled with the appropriate shipping information.

All packages are inspected and tested prior to shipping. The packages undergo a series of quality control checks to ensure they are in good condition before being sent out. A tracking number is provided to the customer so they can monitor the progress of their package.

Gallium Nitride Wafer is shipped using a reliable shipping service such as FedEx, UPS, or USPS. The package is tracked and insured for any damages or losses that may occur during transit. The customer is responsible for any additional charges due to additional handling, taxes, or customs fees.

FAQ:

Questions & Answers about Gallium Nitride Wafer
  • Q: What is the brand name of Gallium Nitride Wafer?
    A: The brand name is ZMSH.
  • Q: What is the model number of Gallium Nitride Wafer?
    A: The model number is InP.
  • Q: Where is the place of origin of Gallium Nitride Wafer?
    A: The place of origin is China.
  • Q: What are the features of Gallium Nitride Wafer?
    A: The Gallium Nitride Wafer has excellent electrical and thermal properties, wide band gap and high breakdown field strength.
  • Q: What is the application of Gallium Nitride Wafer?
    A: The Gallium Nitride Wafer is widely used in power electronics, RF devices, optoelectronic devices, and high-temperature and high-frequency device applications.

Product Tags:

DSP Indium Phosphide Wafer

      

N-Type InP Wafers

      

High Electron Mobility InP Wafers

      
Wholesale SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity from china suppliers

SSP DSP VGF N-Type P-Type InP Wafers High Electron Mobility / Thermal Conductivity Images

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